naina semiconductor ltd. mbr20045ct thru MBR200100CTr 1 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com silicon schottky diode, 200a features ? guard ring protection ? low forward voltage drop ? high surge current capability ? up to 100v v rrm maximum ratings (t j = 25 o c unless otherwise specified) parameter symbol conditions mbr20045ct (r) mbr20060ct (r) mbr20080ct (r) mbr200100c t(r) units repetitive peak reverse voltage v rrm 45 60 80 100 v rms reverse voltage v rms 32 42 56 70 v dc blocking voltage v dc 45 60 80 100 v average forward current i f(av) t c 135 o c 200 200 200 200 a non-repetitive forward surge current, half sine- wave i fsm t c = 25 o c t p = 8.3 ms 1500 1500 1500 1500 a electrical characteristics (t j = 25 o c unless otherwise specified) parameter symbol conditions mbr20045ct (r) mbr20060ct (r) mbr20080ct (r) mbr200100c t(r) units dc forward voltage v f i f = 100 a t j = 25 o c 0.68 0.76 0.88 0.88 v dc reverse current i r v r = 20 v t j = 25 o c 5 5 5 5 ma v r = 20 v t j = 125 o c 200 200 200 200 thermal characteristics (t j = 25 o c unless otherwise specified) parameter symbol mbr20045ct (r) mbr20060ct (r) mbr20080ct (r) mbr200100c t(r) units thermal resistance junction to case r thj-c 0.5 0.5 0.5 0.5 o c/w operating, storage temperature range t j , t stg - 40 to +175 - 40 to +175 - 40 to +175 - 40 to +175 o c twin tower package http://www..net/ datasheet pdf - http://www..net/
naina semiconductor ltd. mbr20045ct thru MBR200100CTr 2 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com package outline all dimensions in mm ordering table mbr 200 20 ct 1 2 3 4 1 C device type > mbr = schottky barrier diode module 2 C current rating = i f(av) 3 C voltage = v rrm 4 C polarity > ct = normal (cathode to base) > ctr = reverse (anode to base) http://www..net/ datasheet pdf - http://www..net/
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